Transistor array panel, manufacturing method thereof, and display device including the same

ABSTRACT

A transistor display panel according to an exemplary embodiment includes: a substrate; a first transistor disposed on the substrate; and a pixel electrode connected to the first transistor, wherein the first transistor includes a lower electrode disposed on the substrate, a first semiconductor overlapping the lower electrode, a first insulating layer covering the first semiconductor, a first gate electrode disposed on the first insulating layer and overlapping the first semiconductor, and a first source connecting member and a first drain connecting member disposed on the same layer as the first gate electrode and connected to the first semiconductor, wherein the first gate electrode is formed as a triple layer, the first source connecting member and first drain connecting member are formed as a double layer, and the first source connecting member is connected to the lower electrode.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2016-0042782 filed in the Korean IntellectualProperty Office on Apr. 7, 2016, the entire contents of which areincorporated herein by reference.

BACKGROUND 1. Field

The present disclosure relates to a transistor display panel, amanufacturing method thereof, and a display device including the same.

2. Description of the Related Art

A transistor included in various electronic devices such as a displaydevice generally includes a gate electrode, a source electrode, a drainelectrode, and a semiconductor. The transistor is used as a switchingelement, a driving element, and/or the like in the display device.

The semiconductor is an important factor in determining characteristicsof the transistor. The semiconductor mainly includes silicon (Si). Thesilicon may be one of amorphous silicon and polysilicon according to acrystallization type. Amorphous silicon has a simple manufacturingprocess but has low charge mobility, which means there is a limit formanufacturing a high performance transistor. Polysilicon has high chargemobility but a process of crystallizing the silicon is required, whichmeans the manufacturing cost is increased and the process iscomplicated. Recently, studies on a transistor using an oxidesemiconductor with a higher on/off ratio and carrier mobility than theamorphous silicon, and lower cost and higher uniformity thanpolycrystalline silicon, have progressed.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention, andtherefore it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY

An exemplary embodiment reduces manufacturing cost and improvescharacteristics of a transistor.

A transistor display panel according to an exemplary embodimentincludes: a substrate; a first transistor disposed on the substrate; anda pixel electrode connected to the first transistor, wherein the firsttransistor includes: a first semiconductor on the substrate, a firstinsulating layer covering the first semiconductor, a first gateelectrode overlapping the first semiconductor, and a first connectingmember disposed on the same layer as the first gate electrode andconnected to the first semiconductor, wherein the first gate electrodeincludes at least three layers, the first connecting member includes atleast two layers

The first gate electrode may include a first main gate layer, and afirst upper gate layer and a first lower gate layer respectivelydisposed on and under the first main gate layer.

The first connecting member may include a first source connecting memberand a first drain connecting member.

The first source connecting member may include a first main sourceconnecting layer and a first lower source connecting layer disposedthereunder, and the first drain connecting member may include a firstmain drain connecting layer and a first lower drain connecting layerdisposed thereunder.

The first main source connecting layer and the first main drainconnecting layer may be disposed on the same layer as the first maingate layer.

A second insulating layer covering the first gate electrode, the firstsource connecting member, and the first drain connecting member, and afirst source electrode and a first drain electrode disposed on thesecond insulating layer may be further included, and the first sourceelectrode may be connected to the first source connecting member.

A lower electrode under the first semiconductor and connected to thefirst source connecting member may be further included.

A buffer layer covering the lower electrode may be further included, andthe first source connecting member may be connected to the lowerelectrode through a lower opening of the buffer layer and the firstinsulating layer.

The first semiconductor may include a first channel, and a first sourceregion and a first drain region disposed at respective sides of thefirst channel, and the first source region and the first drain regionmay be respectively connected to the first source connecting member andthe first drain connecting member.

A scan line disposed on the substrate, a data line crossing the scanline, and a second transistor connected to the scan line and the dataline may be further included, the second transistor may include a secondsemiconductor disposed at the same layer as the first semiconductor, asecond gate electrode overlapping the second semiconductor, and a secondsource connecting member and a second drain connecting member disposedat the same layer as the second gate electrode and connected to thesecond semiconductor, wherein the second gate electrode includes atleast three layers, and the first source connecting member and the firstdrain connecting member include at least two layers.

The first semiconductor and the second semiconductor may include anoxide semiconductor material.

Also, a manufacturing method of a transistor display panel according toan exemplary embodiment includes: forming a first semiconductor on asubstrate; forming a first insulating layer on the first semiconductor;and forming a first gate electrode, a first connecting member on thefirst insulating layer, wherein the first gate electrode includes atleast three layers, the first connecting member includes at least twolayers.

The step of forming the first gate electrode, the first sourceconnecting member, and the first drain connecting member may includedepositing a lower electrode layer, a main electrode layer, and an upperelectrode layer on the first insulating layer, and patterning the lowerelectrode layer, the main electrode layer, and the upper electrode layerby using a half-tone mask to form the first gate electrode as at leastthree layers and a first source connecting member and the first drainconnecting member as at least two layers, wherein the first connectingmember may include a first source connecting member and a first drainconnecting member.

The first gate electrode may include: a first main gate layer, and afirst upper gate layer and a first lower gate layer respectivelydisposed on and under the first main gate layer; the first sourceconnecting member may include a first main source connecting layer and afirst lower source connecting layer disposed thereunder; and the firstdrain connecting member may include a first main drain connecting layerand a first lower drain connecting layer disposed thereunder.

The manufacturing method may further include forming a lower electrodeon a substrate; forming a second insulating layer covering the firstgate electrode, the first source connecting member, and the first drainconnecting member, and forming a first source electrode and a firstdrain electrode on the second insulating layer, wherein the first sourceelectrode may be connected to the first source connecting member and thefirst source connecting member is connected to the lower electrode.

The method may further include forming a buffer layer covering the lowerelectrode, and forming an opening overlapping the lower electrode in thebuffer layer and the first insulating layer, wherein the first sourceconnecting member may be connected to the lower electrode through theopening.

Further, a display device including a transistor display panel accordingto an exemplary embodiment includes: a substrate; a first transistordisposed on the substrate; and a light-emitting diode element connectedto the first transistor, wherein the first transistor includes a lowerelectrode disposed on the substrate, a first semiconductor overlappingthe lower electrode, a first insulating layer covering the firstsemiconductor, a first gate electrode disposed on the first insulatinglayer and overlapping the first semiconductor, and a first sourceconnecting member and a first drain connecting member disposed on thesame layer as the first gate electrode and connected to the firstsemiconductor, wherein the first gate electrode includes at least threelayers, the first connecting member includes at least two layers, andthe first connecting member is connected to the lower electrode.

The first connecting member may include a first source connecting memberand a first drain connecting member.

The first gate electrode may include a first main gate layer, and afirst upper gate layer and a first lower gate layer respectivelydisposed on and under the first main gate layer, the first sourceconnecting member may include a first main source connecting layer and afirst lower source connecting layer disposed thereunder, and the firstdrain connecting member may include a first main drain connecting layerand a first lower drain connecting layer disposed thereunder.

A scan line disposed on the substrate, a data line crossing the scanline, and a second transistor connected to the scan line and the dataline may be further included, the second transistor may include a secondsemiconductor disposed at the same layer as the first semiconductor, asecond gate electrode overlapping the second semiconductor, and a secondsource connecting member and a second drain connecting member disposedon the same layer as the second gate electrode and connected to thesecond semiconductor, the second gate electrode includes at least threelayers, and the first source connecting member and the first drainconnecting member include at least two layer.

The first semiconductor and the second semiconductor may include anoxide semiconductor material.

The light-emitting diode element may include an organic light emittingdiode.

According to exemplary embodiments, the number of manufacturingprocesses and the manufacturing time may be minimized, thereby reducingthe manufacturing cost.

Also, characteristics of the transistor such as reliability may beimproved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a transistor display panel according to anexemplary embodiment.

FIG. 2 is a cross-sectional view taken along lines II-II and II′-II′ ofFIG. 1.

FIG. 3, FIG. 4 and FIG. 5 are cross-sectional views showing amanufacturing method of a transistor display panel according to anexemplary embodiment as cross-sectional views taken along lines II-IIand II′-II′ of FIG. 1.

FIG. 6 is a top plan view of a step following that of FIG. 5.

FIG. 7 is a cross-sectional view taken along line VII-VII and VII′-VII′of FIG. 6.

FIG. 8 is an equivalent circuit diagram of one pixel of a display deviceincluding a transistor display panel according to an exemplaryembodiment.

FIG. 9 is a cross-sectional view of a display device of FIG. 8.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The present disclosure will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. As those skilled in the art would realize,the described embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present disclosure.

To clearly explain the present disclosure, portions that are notdirectly related to the present disclosure are omitted, and the samereference numerals are attached to the same or similar constituentelements through the entire specification.

In addition, the size and thickness of each configuration shown in thedrawings are arbitrarily shown for better understanding and ease ofdescription, and the present disclosure is not limited thereto. In thedrawings, the thickness of layers, films, panels, regions, etc., areexaggerated for clarity. In the drawings, for better understanding andease of description, the thicknesses of some layers and areas areexaggerated.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itmay be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present. Further,in the specification, the word “on” or “above” means positioned on orbelow the object portion, and does not necessarily mean positioned onthe upper side of the object portion based on a gravitational direction.

In addition, unless explicitly described to the contrary, the word“comprise” and variations such as “comprises” or “comprising” will beunderstood to imply the inclusion of stated elements but not theexclusion of any other elements.

Further, throughout the specification, the phrase “in a plan view” meansviewing a target portion from the top, and the phrase “in across-sectional view” means viewing a cross-section formed by verticallycutting a target portion from the side.

Now, a transistor display panel according to an exemplary embodimentwill be described with reference to FIG. 1 and FIG. 2.

FIG. 1 is a top plan view of a transistor display panel according to anexemplary embodiment, and FIG. 2 is a cross-sectional view taken alonglines II-II and II′-II′ of FIG. 1.

While FIG. 2 is the cross-sectional view of the transistor display panelshown in FIG. 1 taken along the lines II-II and II′-II′, a planestructure of the transistor display panel having a cross-sectionalstructure like in FIG. 2 is not limited to that of FIG. 1. FIG. 1 showsa part of the transistor display panel of an organic light emittingdiode display including a driving transistor Qd and a switchingtransistor Qs; however, an exemplary embodiment is not limited to theorganic light emitting diode display, and may be applied to variousdisplay devices such as a liquid crystal display.

Referring to FIG. 1 and FIG. 2, a transistor display panel according toan exemplary embodiment includes a substrate 110 including an insulatingmaterial such as plastic and glass, and a plurality of transistors Qdand Qs positioned on the substrate 110. When the display device is theorganic light emitting diode display, the transistors Qd and Qs may be adriving transistor Qd or a switching transistor Qs positioned in a pixelarea.

In the drawing, a first direction D1 and a second direction D2 areparallel to a surface shown when viewing in a direction perpendicular toa surface of the substrate 110 and are perpendicular to each other, anda third direction D3 is perpendicular to the first and second directionsD1 and D2 and is substantially perpendicular to the surface of thesubstrate 110. The third direction D3 may be mainly represented in thecross-sectional structure, and is referred to as a cross-sectionaldirection. A structure shown when observing the surface parallel to thefirst direction D1 and the second direction D2 is referred to as a planestructure. In the cross-sectional structure, if a constituent element ispositioned on another constituent element, it means that two constituentelements are arranged in the third direction D3, and other constituentelements may be positioned between the two constituent elements.

The driving transistor Qd includes a first semiconductor 130 d, a firstgate electrode 124 d, a first source electrode 173 d, and a first drainelectrode 175 d. Also, the switching transistor Qs includes a secondsemiconductor 130 s, a second gate electrode 124 s, a second sourceelectrode 153 s, and a second drain electrode 175 s.

In this case, the first semiconductor 130 d includes a first channel 131d, and a first source region 133 d and a first drain region 135 dpositioned at respective sides of the first channel 131 d, and thesecond semiconductor 130 s includes a second channel 131 s, and a secondsource region 133 s and a second drain region 135 s positioned atrespective sides of the second channel 131 s.

Next, for better comprehension and ease of description, each ofconstituent elements that are sequentially deposited will be describedwith reference to FIG. 1 and FIG. 2.

A lower electrode 25 is positioned on the substrate 110. The substrate110 may be formed as an insulating substrate made of glass, quartz,ceramic, metal, plastic, or the like, and the lower electrode 25 may beformed as a multilayer having a metal layer including one among copper(Cu), copper alloys, aluminum (Al), and aluminum alloys, and a metallayer including one among molybdenum (Mo) and molybdenum alloys.

A buffer layer 111 is positioned on the substrate 110 and the lowerelectrode 25. The buffer layer 111 covers the substrate 110 and thelower electrode 25. The buffer layer 111 may include an inorganicinsulating material such as a silicon oxide (SiOx), a silicon nitride(SiNx), aluminum oxide (Al2O3), hafnium oxide (HfO3), and yttrium oxide(Y2O3). The buffer layer 111 may be a single layer or a multilayer. Forexample, when the buffer layer 111 is a double layer, a lower layerthereof may include a silicon nitride (SiNx) and an upper layer thereofmay include a silicon oxide (SiOx). The buffer layer 111 serves toflatten a surface while preventing undesirable materials such asimpurities or moisture from permeating.

The first semiconductor 130 d and the second semiconductor 130 s arepositioned on the buffer layer 111 to be separated from each other. Thefirst semiconductor 130 d and the second semiconductor 130 s may be madeof an oxide semiconductor material. The oxide semiconductor material mayinclude a metal oxide semiconductor, and may include oxides of metalssuch as zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium(Ti), or a combination of metals such as zinc (Zn), indium (In), gallium(Ga), tin (Sn), and titanium (Ti), and oxides thereof. In furtherdetail, the oxide may include at least one among zinc oxide (ZnO),zinc-tin oxide (ZTO), zinc-indium oxide (ZIO), indium oxide (InO),titanium oxide (TiO), indium-gallium-zinc oxide (IGZO), andindium-zinc-tin oxide (IZTO).

The first source region 133 d, the first drain region 135 d, the secondsource region 133 s, and the second drain region 135 s may furtherinclude hydrogen (H) along with the oxide semiconductor material.Hydrogen (H) is diffused in the oxide semiconductor material such thatthe first source region 133 d, the first drain region 135 d, the secondsource region 133 s, and the second drain region 135 s are conductive.

A first insulating layer 140 covering the buffer layer 111, the firstsemiconductor 130 d, and the second semiconductor 130 s is positionedthereon. The first insulating layer 140 may include at least one among asilicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride(SiON), aluminum oxide (Al2O3), hafnium oxide (HfO3), and yttrium oxide(Y2O3).

The first insulating layer 140 may have a first opening 63 d overlappingthe first source region 133 d, a second opening 65 d overlapping thefirst drain region 135 d, a third opening 63 s overlapping the secondsource region 133 s, and a fourth opening 65 s overlapping the seconddrain region 135 s. Also, the buffer layer 111 and the first insulatinglayer 140 may have a lower opening 41 d overlapping the lower electrode25.

The first gate electrode 124 d, the second gate electrode 124 s, a scanline 121, a storage electrode 53, a first source connecting member 153d, a first drain connecting member 155 d, a second drain connectingmember 155 s, and the second source electrode 153 s are positioned onthe first insulating layer 140. As shown in FIG. 1, the first gateelectrode 124 d extends from the scan line 121 in the first channel 131d direction, and ends of the second gate electrode 124 s are integrallyconnected to the storage electrode 53 and the second source electrode153 s, respectively.

The first gate electrode 124 d, the second gate electrode 124 s, thescan line 121, and the storage electrode 53 have a structure in whichthree layers are deposited. That is, the first gate electrode 124 dincludes a first main gate layer 24 dm, and a first upper gate layer 24du and a first lower gate layer 24 dd respectively positioned on andunder the first main gate layer 24 dm. Also, the second gate electrode124 s includes a second main gate layer 24 sm, and a second upper gatelayer 24 su and a second lower gate layer 24 sd respectively positionedon and under the second main gate layer 24 sm.

In contrast, the first source connecting member 153 d, the first drainconnecting member 155 d, the second drain connecting member 155 s, andthe second source electrode 153 s have a structure in which two layersare deposited. That is, the first source connecting member 153 dincludes a first main source connecting layer 53 dm and a first lowersource connecting layer 53 dd positioned thereunder, and the first drainconnecting member 155 d includes a first main drain connecting layer 55dm and a first lower drain connecting layer 55 dd positioned thereunder.Also, the second drain connecting member 155 s includes a second maindrain connecting member 55 sm and a second lower drain connecting member55 sd positioned thereunder, and the second source electrode 153 sincludes a second main source electrode 53 sm and a second lower sourceelectrode 53 sd positioned thereunder.

The first main gate layer 24 dm, the second main gate layer 24 sm, thefirst main source connecting layer 53 dm, the first main drainconnecting layer 55 dm, the second main drain connecting member 55 sm,and the second main source electrode 53 sm may be a metal layerincluding one among copper (Cu), copper alloys, aluminum (Al), andaluminum alloys. Also, the first lower gate layer 24 dd, the first uppergate layer 24 du, the second lower gate layer 24 sd, the second uppergate layer 24 su, the first lower drain connecting layer 55 dd, thesecond lower drain connecting member 55 sd, the first lower sourceelectrode 53 dd, and the second lower source electrode 53 sd may be ametal layer including one of molybdenum (Mo) and titanium (Ti).

The first source connecting member 153 d connects the first sourceregion 133 d and the lower electrode 25 through the first opening 63 d.The first drain connecting member 155 d is connected to the first drainregion 135 d through the second opening 65 d. The second sourceelectrode 153 s is connected to the second source region 133 s throughthe third opening 63 s, and the second drain connecting member 155 s isconnected to the second drain region 135 s through the fourth opening 65s.

A second insulating layer 160 covering the first insulating layer 140,the first gate electrode 124 d, the second gate electrode 124 s, thescan line 121, the storage electrode 53, the first source connectingmember 153 d, the first drain connecting member 155 d, the second drainconnecting member 155 s, and the second source electrode 153 s ispositioned thereon.

The second insulating layer 160 has a first contact hole 68 doverlapping the first source connecting member 153 d, a second contacthole 61 d overlapping the first drain connecting member 155 d, and athird contact hole 61 s overlapping the second drain connecting member155 s.

The second insulating layer 160 may include an insulating material suchas a silicon oxide (SiOx), a silicon nitride (SiNx), a siliconoxynitride (SiON), aluminum oxide (Al2O3), hafnium oxide (HfO3), andyttrium oxide (Y2O3).

A component such as hydrogen included in a gas such as silane (SiH4) andammonia (NH3) used in a layer formation process of the second insulatinglayer 160 may be diffused in the first source region 133 d, the firstdrain region 135 d, the second source region 133 s, and the second drainregion 135 s such that the first source region 133 d, the first drainregion 135 d, the second source region 133 s, and the second drainregion 135 s have low resistance. Also, the component such as hydrogen(H) included in the second insulating layer 160 after the layerformation of the second insulating layer 160 may be diffused such thatthe first source region 133 d, the first drain region 135 d, the secondsource region 133 s, and the second drain region 135 s have lowresistance.

In this case, since the first gate electrode 124 d and the second gateelectrode 124 s are formed as a triple layer, hydrogen (H) of the secondinsulating layer 160 may be prevented from being diffused in the firstchannel 131 d and the second channel 131 s that overlap the first gateelectrode 124 d and the second gate electrode 124 s. In contrast, sincethe first source connecting member 153 d, the first drain connectingmember 155 d, the second drain connecting member 155 s, and the secondsource electrode 153 s are formed a double layer, hydrogen (H) of thesecond insulating layer 160 is easily diffused in the first sourceregion 133 d, the first drain region 135 d, the second source region 133s, and the second drain region 135 s.

As above-described, the first gate electrode 124 d and the second gateelectrode 124 s are formed as a triple layer, and the first sourceconnecting member 153 d, the first drain connecting member 155 d, thesecond drain connecting member 155 s, and the second source electrode153 s are formed as a double layer; therefore, only the first sourceregion 133 d, the first drain region 135 d, the second source region 133s, and the second drain region 135 s may be conductive. Accordingly, aprocess of separately etching the first insulating layer 140 coveringthe first semiconductor 130 d and the second semiconductor 130 s to onlyexpose the first source region 133 d, the first drain region 135 d, thesecond source region 133 s, and the second drain region 135 s may beomitted.

Also, since the first insulating layer 140 is positioned between thefirst gate electrode 124 d, and the first source region 133 d and thefirst drain region 135 d, a parasitic capacitance formed between thefirst gate electrode 124 d, and the first source region 133 d and thefirst drain region 135 d, may be minimized. Also, since the firstinsulating layer 140 is positioned between the second gate electrode 124s, and the second source region 133 s and the second drain region 135 s,the parasitic capacitance formed between the second gate electrode 124s, and the second source region 133 s and the second drain region 135 s,may be minimized. Accordingly, reliability of the transistor may beimproved.

As shown in FIG. 1 and FIG. 2, a data line 171 having the second drainelectrode 175 s, a driving voltage line 172 having the first drainelectrode 175 d, and the first source electrode 173 d are positioned onthe second insulating layer 160.

The data line 171 transmits a data signal Dm and extends in a directioncrossing the scan line 121. The driving voltage line 172 transmits adriving voltage ELVDD, is separated from the data line 171, and extendsin the same direction in which the data line 171 extends.

The first source electrode 173 d is connected to the first sourceconnecting member 153 d through the first contact hole 68 d, and thefirst drain electrode 175 d is connected to the first drain connectingmember 155 d through the second contact hole 61 d. Also, the seconddrain electrode 175 s is connected to the second drain connecting member155 s through the third contact hole 61 s.

The first source electrode 173 d is connected to the first sourceconnecting member 153 d through the first contact hole 68 d, and thefirst source connecting member 153 d connects the first source region133 d through the first opening 63 d and the lower electrode 25 throughthe lower opening 41 d, such that the first source electrode 173 d isconnected to the lower electrode 25. Accordingly, the source voltage asa voltage of the first source region 133 d may be applied to the lowerelectrode 25.

As above-described, if the source voltage is applied to the lowerelectrode 25, a current slope decreases in a saturation region of avoltage-current characteristic graph of the driving transistor Qd suchthat an output saturation characteristic of the driving transistor Qdmay be improved.

Also, since the first source region 133 d and the lower electrode 25 areconnected by using the first source connecting member 153 d positionedon the first insulating layer 140, the depth of the lower opening 41 dformed in the first insulating layer 140 and the buffer layer 111decreases. As above-described, the depth of the lower opening 41 dformed in the first insulating layer 140 and the buffer layer 111 toconnect the first source connecting member 153 d and the lower electrode25 is small, and as such, the time of the etching process to form thelower opening 41 d may be shortened.

On the other hand, since the second source electrode 153 s connected tothe second source region 133 s through the third opening 63 s isintegrally connected to the first gate electrode 124 d, the data signalDm transmitted through the switching transistor Qs is transmitted to thefirst gate electrode 124 d of the driving transistor Qd.

The lower electrode 25 may function as a light blocking film. That is,the lower electrode 25 prevents external light from reaching the firstsemiconductor 130 d such that a characteristic deterioration of thefirst semiconductor 130 d may be prevented and a leakage current of thedriving transistor Qd may be controlled.

A passivation layer 180 is positioned on the first source electrode 173d, the first drain electrode 175 d, and the second drain electrode 175s.

The passivation layer 180 may include at least one of an inorganicinsulating material and an organic insulating material, and may be madeof a single layer or a multilayer. An upper surface of the passivationlayer 180 may be substantially flat. The passivation layer 180 has apixel contact hole 81 overlapping the first source electrode 173 d.

A pixel electrode 191 is positioned on the passivation layer 180, andthe pixel electrode 191 may be made of a transparent conductive materialsuch as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide(ZnO), or indium oxide (In2O3), or a reflective metal such as lithium(Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithiumfluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg),or gold (Au). The pixel electrode 191 is electrically connected to thefirst source electrode 173 d of the driving transistor Qd through thepixel contact hole 81 formed in the passivation layer 180.

Next, a manufacturing method of the transistor display panel shown inFIG. 1 and FIG. 2 will be described in detail with reference to FIG. 3to FIG. 7.

FIG. 3 to FIG. 5 are cross-sectional views showing a manufacturingmethod of a transistor display panel according to an exemplaryembodiment as cross-sectional views taken along lines II-II and II′-II′of FIG. 1, FIG. 6 is a top plan view of a step following that of FIG. 5,and FIG. 7 is a cross-sectional view taken along line VII-VII andVII′-VII′ of FIG. 6.

First, as shown in FIG. 3, a conductive material such as a metal isdeposited on a substrate 110 through a sputtering method, and ispatterned by using a photosensitive material such as a photoresist and afirst mask to form a lower electrode 25. Also, on the substrate 110having the lower electrode 25, an inorganic insulating material such asa silicon oxide (SiOx), a silicon nitride (SiNx), aluminum oxide(Al₂O₃), hafnium oxide (HfO₃), yttrium oxide (Y₂O₃), and the like isdeposited by a chemical vapor deposition (CVD) method to form a bufferlayer 111.

Next, an oxide semiconductor material such as zinc oxide (ZnO), zinc-tinoxide (ZTO), zinc-indium oxide (ZIO), indium oxide (InO), titanium oxide(TiO), indium-gallium-zinc oxide (IGZO), indium-zinc-tin oxide (IZTO),and the like is deposited on the buffer layer 111 through a chemicalvapor deposition method and is patterned by using a second mask to forma first semiconductor 130 d and a second semiconductor 130 s.

Also, on the substrate 110 including the first semiconductor 130 d andthe second semiconductor 130 s, an inorganic insulating material such asa silicon oxide (SiOx), a silicon nitride (SiNx), silicon oxynitride(SiON), and the like is deposited through the chemical vapor depositionmethod to form a first insulating layer 140. Next, the first insulatinglayer 140 is patterned by using a third mask to form a first opening 63d, a second opening 65 d, a third opening 63 s, and a fourth opening 65s. In this case, the first insulating layer 140 and the buffer layer 111are simultaneously patterned to form a lower opening 41 d.

Also, a conductive material such as metal is deposited on the firstinsulating layer 140 through the sputtering method to form a gateelectrode layer. The gate electrode layer is formed by sequentiallydepositing a triple layer of a lower electrode layer 120 d with athickness of about 100 to 200 Å, a main electrode layer 120 m, and anupper electrode layer 120 u with a thickness of about 100 to 200 Å. Thethickness of the main electrode layer 120 m is greater than thethickness of the lower electrode layer 120 d or the upper electrodelayer 120 u.

A photosensitive film is formed on the gate electrode layer. Thephotosensitive film is patterned by using a half-tone mask 1000 as afourth mask to form a first photosensitive film PR1 and a secondphotosensitive film PR2. In this case, the half-tone mask has a firstportion A1 blocking most of a light, a second portion A2 blocking a partof a light, and a third portion A3 transmitting most of a light.Accordingly, the photosensitive film that is presented at the positioncorresponding to the third portion A3 is removed by an exposure anddeveloping process. Further, only the first photosensitive film PR1 thatis presented at the position corresponding to the first portion A1 andthe second photosensitive film PR2 that is presented at the positioncorresponding to the second portion A2 remain. In this case, the secondphotosensitive film PR2 is partially exposed and developed such that thethickness h2 of the second photosensitive film PR2 is smaller than thethickness h1 of the first photosensitive film PR1.

Next, as shown in FIG. 4, the gate electrode layer is firstly wet-etchedby using the patterned first photosensitive film PR1 and secondphotosensitive film PR2 as an etching mask to form a first gateelectrode 124 d, a second gate electrode 124 s, a first sourceconnecting member 153 d, a first drain connecting member 155 d, a seconddrain connecting member 155 s, and a second source electrode 153 s.

The first gate electrode 124 d and the second gate electrode 124 s areformed at the position corresponding to the first photosensitive filmPR1, and the first source connecting member 153 d, the first drainconnecting member 155 d, the second drain connecting member 155 s, andthe second source electrode 153 s are formed at the positioncorresponding to the second photosensitive film PR2.

The first gate electrode 124 d includes a first main gate layer 24 dm, afirst lower gate layer 24 dd, and a first upper gate layer 24 du of thesame pattern. In addition, the second gate electrode 124 s includes asecond main gate layer 24 sm, a second lower gate layer 24 sd, and asecond upper gate layer 24 su of the same pattern. The first sourceconnecting member 153 d includes a first main source connecting layer 53dm, a first lower source connecting layer 53 dd, and a first uppersource connecting member 53 du of the same pattern, and the first drainconnecting member 155 d includes a first main drain connecting layer 55dm, a first lower drain connecting layer 55 dd, and a first upper drainconnecting member 55 du of the same pattern. Further, the second drainconnecting member 155 s includes a second main drain connecting member55 sm, a second lower drain connecting member 55 sd, and a second upperdrain connecting member 55 su of the same pattern, and the second sourceelectrode 153 s includes a second main source electrode 53 sm, a secondlower source electrode 53 sd, and a second upper source electrode 53 suof the same pattern.

Next, as shown in FIG. 5, an ashing process is performed to remove thesecond photosensitive film PR2 formed on the first source connectingmember 153 d, the first drain connecting member 155 d, the second drainconnecting member 155 s, and the second source electrode 153 s. In thiscase, the first photosensitive film PR1 that is thicker than the secondphotosensitive film PR2 is not removed, and a partial photosensitivefilm PR1′ remains. A thickness h1′ of the partial photosensitive filmPR1′ is smaller than the thickness h1 of the first photosensitive filmPR1. Next, a second wet etching process is performed on the first sourceconnecting member 153 d, the first drain connecting member 155 d, thesecond drain connecting member 155 s, and the second source electrode153 s that are exposed to remove the first upper source connectingmember 53 du, the first upper drain connecting member 55 du, the secondupper drain connecting member 55 su, and the second upper sourceelectrode 53 su as the upper layer. Accordingly, the first sourceconnecting member 153 d, the first drain connecting member 155 d, thesecond drain connecting member 155 s, and the second source electrode153 s are formed as a double layer, and the first gate electrode 124 dand the second gate electrode 124 s are formed as a triple layer.

Next, as shown in FIG. 6 and FIG. 7, an inorganic insulating materialsuch as a silicon oxide (SiOx), a silicon nitride (SiNx), and siliconoxynitride (SiON) is deposited through the chemical vapor depositionmethod to form a second insulating layer 160 with the structure of asingle layer or a multilayer.

Since the first source connecting member 153 d, the first drainconnecting member 155 d, the second drain connecting member 155 s, andthe second source electrode 153 s are formed as a double layer, thethickness thereof is thin such that hydrogen (H) included in the secondinsulating layer 160 is diffused in the first source region 133 d, thefirst drain region 135 d, the second source region 133 s, and the seconddrain region 135 s. However, since the first gate electrode 124 d andthe second gate electrode 124 s are formed as a triple layer, hydrogen(H) of the second insulating layer 160 is prevented from being diffusedin the first channel 131 d and the second channel 131 s overlapping thefirst gate electrode 124 d and the second gate electrode 124 s.

As above-described, the first gate electrode 124 d and the second gateelectrode 124 s are formed as a triple layer, and the first sourceconnecting member 153 d, the first drain connecting member 155 d, thesecond drain connecting member 155 s, and the second source electrode153 s are formed as a double layer; therefore, only the first sourceregion 133 d, the first drain region 135 d, the second source region 133s, and the second drain region 135 s may be conductive. Accordingly, aprocess of separately etching the first insulating layer 140 coveringthe first semiconductor 130 d and the second semiconductor 130 s to onlyexpose the first source region 133 d, the first drain region 135 d, thesecond source region 133 s, and the second drain region 135 s may beomitted. Accordingly, a number of manufacturing processes and amanufacturing time may be minimized, thereby reducing manufacturingcost.

Next, as shown in FIG. 1 and FIG. 2, the second insulating layer 160 ispatterned by using a fifth mask to form a first contact hole 68 doverlapping the first source connecting member 153 d, a second contacthole 61 d overlapping the first drain connecting member 155 d, and athird contact hole 61 s overlapping the second drain connecting member155 s.

Next, a conductive material such as metal is deposited on the secondinsulating layer 160 through the sputtering method, and is patterned byusing a sixth mask to form a data line 171 having a second drainelectrode 175 s, a driving voltage line 172 having a first drainelectrode 175 d, and a first source electrode 173 d.

Also, a passivation layer 180 covering the data line 171 having thesecond drain electrode 175 s, the driving voltage line 172 having thefirst drain electrode 175 d, and the first source electrode 173 d isformed. Next, a pixel contact hole 81 overlapping the first sourceelectrode 173 d is formed in the passivation layer 180 by using aseventh mask. A pixel electrode 191 is then formed on the passivationlayer 180. The pixel electrode 191 is connected to the first sourceelectrode 173 d through the pixel contact hole 81.

The display device including the transistor display panel according toan exemplary embodiment will now be described with reference to FIG. 8and FIG. 9.

FIG. 8 is an equivalent circuit diagram of one pixel of a display deviceincluding a transistor display panel according to an exemplaryembodiment, and FIG. 9 is a cross-sectional view of a display device ofFIG. 8.

The display device according to the present exemplary embodiment is anorganic light emitting diode display, and may include the transistordisplay panel according to the above-described exemplary embodiment.

As shown in FIG. 8, one pixel PX of the display device including thetransistor display panel according to an exemplary embodiment includessignal lines 121, 171, and 172, a plurality of transistors Qd and Qsconnected to the signal lines 121, 171, and 172, a storage capacitorCst, and an organic light emitting diode (OLED).

The plurality of signal lines 121, 171, and 172 include a scan line 121transmitting a scan signal Sn, a data line 171 transmitting a datasignal Dm, and a driving voltage line 172 transmitting a driving voltageELVDD.

The plurality of transistors Qd and Qs include a driving transistor Qdand a switching transistor Qs.

The switching transistor Qs has a control terminal, an input terminal,and an output terminal, wherein the control terminal is connected to thescan line 121, the input terminal is connected to the data line 171, andthe output terminal is connected to the driving transistor Qd. Theswitching transistor Qs transmits the data signal Dm applied to the dataline 171 to the driving transistor Qd in response to the gate signal Snapplied to the gate line 121.

The driving transistor Qd also has a control terminal, an inputterminal, and an output terminal, wherein the control terminal isconnected to the switching transistor Qs, the input terminal isconnected to the driving voltage line 172, and the output terminal isconnected to the organic light emitting diode (OLED). The drivingtransistor Qd flows a driving current Id having a magnitude that ischanged depending on a voltage applied between the control terminal andthe output terminal.

The storage capacitor Cst is connected between the control terminal andthe output terminal of the driving transistor Qd. The storage capacitorCst charges the data signal applied to the control terminal of thedriving transistor Qd and maintains it after the switching transistor Qsis turned off.

The organic light emitting diode (OLED) has an anode connected to theoutput terminal of the driving transistor Qd and a cathode connected toa common voltage ELVSS. The organic light emitting diode (OLED) emitslight by changing its intensity depending on an output current Id,thereby displaying an image.

The switching transistor Qs and the driving transistor Qd may ben-channel electric field effect transistors (FET) or p-channel electricfield effect transistors. However, a connection relationship of thetransistors Qs and Qd, the storage capacitor Cst, and the organic lightemitting diode (OLED) may be changed.

A detailed cross-sectional structure of the transistor display panelshown in FIG. 8 will be described in detail with reference to FIG. 9. Inthis case, the description for the above-described constituent elementsis omitted.

As shown in FIG. 9, a pixel defining layer 350 is formed on thepassivation layer 180 and an edge portion of the pixel electrode 191.The pixel defining layer 350 includes a pixel opening 351 that exposesthe pixel electrode 191. The pixel definition layer 350 may include apolyacrylate resin, a polyimide resin, a silica-based inorganicmaterial, etc.

An organic emission layer 370 is positioned in the pixel opening 351 ofthe pixel defining layer 350. The organic emission layer 370 may includeat least one of an emission layer, a hole injection layer (HIL), a holetransporting layer (HTL), an electron transporting layer (ETL), and anelectron injection layer (EIL). When the organic emission layer 370includes all of these layers, the hole injection layer may be disposedon the pixel electrode 191, which is an anode electrode, and the holetransporting layer, the emission layer, the electron transporting layer,and the electron injection layer may be sequentially stacked on the holeinjection layer.

A common electrode 270 is positioned on the pixel definition layer 350and the organic emission layer 370. The common electrode 270 may be madeof a transparent conductive material such as ITO (indium tin oxide), IZO(indium zinc oxide), ZnO (zinc oxide), or In₂O₃ (indium oxide), or areflective metal such as lithium (Li), calcium (Ca), lithiumfluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum(Al), silver (Ag), magnesium (Mg), and gold (Au). The common electrode270 becomes the cathode of the organic light emitting diode (OLED). Thepixel electrode 191, the organic emission layer 370, and the commonelectrode 270 form the organic light emitting diode (OLED). The pixelelectrode 191 may be the anode of the organic light emitting diode(OLED), and the common electrode 270 may be the cathode of the organiclight emitting diode (OLED).

The light emitted from the organic emission layer 370 may be emittedtoward and under the substrate 110 through the substrate 110 directly orby several reflections, or may be emitted in an upper direction of thesubstrate 110 (i.e., away from the substrate 110) without passingthrough the substrate 110.

An encapsulation layer (not shown) protecting the organic light emittingdiode (OLED) may be positioned on the common electrode 270.

While this disclosure has been described in connection with exemplaryembodiments, it is to be understood that the disclosure is not limitedto the disclosed embodiments, but, on the contrary, is intended to covervarious modifications and equivalent arrangements included within thespirit and scope of the appended claims.

<Description of symbols> 110: substrate 111: first insulating layer124d: first gate electrode 124s: second gate electrode 130d: firstsemiconductor 130s: second semiconductor 140: second insulating layer160: third insulating layer 171: data line 172: driving voltage line173d: first source electrode 175d: first drain electrode 153s: secondsource electrode 175s: second drain electrode 180: passivation layer

What is claimed is:
 1. A transistor display panel comprising: asubstrate; a first transistor disposed on the substrate; and a pixelelectrode connected to the first transistor, wherein the firsttransistor includes: a first semiconductor on the substrate, a firstinsulating layer covering the first semiconductor, a first gateelectrode overlapping the first semiconductor, and a first connectingmember disposed on the same layer as the first gate electrode andconnected to the first semiconductor, wherein the first gate electrodeincludes at least three layers, the first connecting member includes atleast two layers.
 2. The transistor display panel of claim 1, whereinthe first gate electrode includes a first main gate layer, and a firstupper gate layer and a first lower gate layer respectively disposed onand under the first main gate layer.
 3. The transistor display panel ofclaim 2, wherein the first connecting member includes a first sourceconnecting member and a first drain connecting member, the first sourceconnecting member includes a first main source connecting layer and afirst lower source connecting layer disposed thereunder, and the firstdrain connecting member includes a first main drain connecting layer anda first lower drain connecting layer disposed thereunder.
 4. Thetransistor display panel of claim 3, wherein the first main sourceconnecting layer and the first main drain connecting layer are disposedon the same layer as the first main gate layer.
 5. The transistordisplay panel of claim 1, further comprising: a second insulating layercovering the first gate electrode, the first source connecting member,and the first drain connecting member; and a first source electrode anda first drain electrode disposed on the second insulating layer, whereinthe first source electrode is connected to the first source connectingmember.
 6. The transistor display panel of claim 5, further comprising alower electrode under the first semiconductor and connected to the firstsource connecting member, a buffer layer covering the lower electrode,wherein the first source connecting member is connected to the lowerelectrode through an opening of the buffer layer and the firstinsulating layer.
 7. The transistor display panel of claim 5, whereinthe first semiconductor includes a first channel, and a first sourceregion and a first drain region disposed at respective sides of thefirst channel, and the first source region and the first drain regionare respectively connected to the first source connecting member and thefirst drain connecting member.
 8. The transistor display panel of claim1, further comprising: a scan line disposed on the substrate; a dataline crossing the scan line; and a second transistor connected to thescan line and the data line, wherein the second transistor includes asecond semiconductor disposed on the same layer as the firstsemiconductor, a second gate electrode overlapping the secondsemiconductor, and a second source connecting member and a second drainconnecting member disposed on the same layer as the second gateelectrode and connected to the second semiconductor, wherein the secondgate electrode includes at least three layers, and the first sourceconnecting member and the first drain connecting member include at leasttwo layers.
 9. The transistor display panel of claim 8, wherein thefirst semiconductor and the second semiconductor include an oxidesemiconductor material.
 10. A method for manufacturing a transistordisplay panel, comprising: forming a first semiconductor on a substrate;forming a first insulating layer on the first semiconductor; and forminga first gate electrode, a first connecting member on the firstinsulating layer, wherein the first gate electrode includes at leastthree layers, the first connecting member includes at least two layers.11. The method of claim 10, wherein the first connecting member includesa first source connecting member and a first drain connecting member thestep of forming the first gate electrode, the first source connectingmember, and the first drain connecting member includes: depositing alower electrode layer, a main electrode layer, and an upper electrodelayer on the first insulating layer; and patterning the lower electrodelayer, the main electrode layer, and the upper electrode layer by usinga half-tone mask to form the first gate electrode as at least threelayers and a first source connecting member and the first drainconnecting member as at least two layers.
 12. The method of claim 11,wherein: the first gate electrode includes a first main gate layer, anda first upper gate layer and a first lower gate layer respectivelydisposed on and under the first main gate layer; the first sourceconnecting member includes a first main source connecting layer and afirst lower source connecting layer disposed thereunder; and the firstdrain connecting member includes a first main drain connecting layer anda first lower drain connecting layer disposed thereunder.
 13. The methodof claim 11, further comprising: forming a lower electrode on asubstrate; forming a second insulating layer covering the first gateelectrode, the first source connecting member, and the first drainconnecting member; and forming a first source electrode and a firstdrain electrode on the second insulating layer, wherein the first sourceelectrode is connected to the first source connecting member and thefirst source connecting member is connected to the lower electrode. 14.The method of claim 13, further comprising: forming a buffer layercovering the lower electrode; and forming an opening overlapping thelower electrode in the buffer layer and the first insulating layer,wherein the first source connecting member is connected to the lowerelectrode through the n opening.
 15. A display device comprising: asubstrate; a first transistor disposed on the substrate; and alight-emitting diode element connected to the first transistor, whereinthe first transistor includes a lower electrode disposed on thesubstrate, a first semiconductor overlapping the lower electrode, afirst insulating layer covering the first semiconductor, a first gateelectrode disposed on the first insulating layer and overlapping thefirst semiconductor, and a first connecting member disposed on the samelayer as the first gate electrode and connected to the firstsemiconductor, wherein the first gate electrode includes at least threelayers, the first connecting member includes at least two layers, andthe first connecting member is connected to the lower electrode.
 16. Thedisplay device of claim 15, wherein: the first connecting memberincludes a first source connecting member and a first drain connectingmember; the first gate electrode includes a first main gate layer, and afirst upper gate layer and a first lower gate layer respectivelydisposed on and under the first main gate layer; the first sourceconnecting member includes a first main source connecting layer and afirst lower source connecting layer disposed thereunder; and the firstdrain connecting member includes a first main drain connecting layer anda first lower drain connecting layer disposed thereunder.
 17. Thedisplay device of claim 16, further comprising: a scan line disposed onthe substrate; a data line crossing the scan line; and a secondtransistor connected to the scan line and the data line, wherein thesecond transistor includes: a second semiconductor disposed on the samelayer as the first semiconductor, a second gate electrode overlappingthe second semiconductor, and a second source connecting member and asecond drain connecting member disposed on the same layer as the secondgate electrode and connected to the second semiconductor, and whereinthe second gate electrode includes at least three layers, and the firstsource connecting member and the first drain connecting member includeat least two layer.
 18. The display device of claim 17, wherein thefirst semiconductor and the second semiconductor include an oxidesemiconductor material.
 19. The display device of claim 15, wherein thelight-emitting diode element includes an organic light emitting diode.